dröm sessions: Ingela P. Arrhenius

You’ve seen the series of brooches that Ingela had designed for us, now we go behind the scenes to speak to Swedish illustrator – Ingela P. Arrhenius for our latest dröm sessions! And yes, this is how Ingela looks like :)

“I’ve always loved the style of the 50´s and 60´s. I love the colors, the compositions, the ceramics, the patterns, the books – everything from that era. And I always have.” – Ingela

Ingela shares with us little nugget bits of creativity and what inspires her. She also introduced us Primus, her pet dog, Doesn’t he look like a sweet little lamb secretly disguised as a dog!

Click here for the full interview.

De Uanstændige - Leif Panduro
Dirty Pretty Things - michaelfaudet
Make Love En Oplysningsbog - Ann Marlene Henning & Tina Bremer-Olszewski
AZ - Lars Arrhenius
Oneness - Mariko Mori
My Wonderful Worl Of Fashion - Nina Chakrabarti

[ Authors ]
Wen-Sheng Xu, Jack F. Douglas, Karl F. Freed
[ Abstract ]
We explore the nature of glass-formation in variable spatial dimensionality ($d$) based on the generalized entropy theory, a synthesis of the Adam-Gibbs model with direct computation of the configurational entropy of polymer fluids using an established statistical mechanical model. We find that structural relaxation in the fluid state asymptotically becomes Arrhenius in the $d\rightarrow\infty$ limit and that the fluid transforms upon sufficient cooling above a critical dimension near $d=8$ into a dense amorphous state with a finite positive residual configurational entropy. Direct computations of the isothermal compressibility and thermal expansion coefficient, taken to be physical measures of packing frustration, demonstrate that these fluid properties strongly correlate with the fragility of glass-formation.

Reliability in Storage Systems, Outline, Measuring NAND Bit Error Rates, Simplified ber Test Flow, Analyzed Behavior, Exemplary Surface 3xnm 40C, NRRE Specs and Data Loss, Impacts of NRRE Limits, NAND ber Surface Equation, Reliability Examination, Commonly Assumed T Model, Measured Temp Behavior of ber, Time to bit error rate Data, ber vs. Temperature, ber is Super Exponential in T, Temperature Scaling Law, Comparison with Arrhenius, Time to ber Acceleration Behavior, Temperature Results, Location Dependence, 3xnm, @ 60C, 3K PE, 276Hours, Error Patterns vs. Age, An Extreme Case, Error Fountain Taxonomy - Isolated, Error Fountain Taxonomy - Noisy, Error Fountain Taxonomy - Bursty, Error Fountain Taxonomy – Bellagio?, . 

[ Authors ]
Mohammed Benwadih, J.A. Chroboczek, Gerard Ghibaudo, Romain Coppard, Dominique Vuillaume
[ Abstract ]
Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K<T<300K range. The low field mobility, mu, and the interface defect density, Nst were extracted from the characteristics for each of the studied IXZOs. At higher T the mobility follows the Arrhenius law with an upward distortion, increasing as T was lowered, gradually transforming into the exp [-(T0/T)¼] variation. We showed that mu(T, Nst) follows mu0exp[-Eaeff(T,Nst)/kT], with T-dependent effective activation energy Eaeff(T, Nst) accounts for the data, revealing a linear correlation between Eaeff and Nst at higher T. Temperature variation of Eaeff(T, Nst) was evaluated using a model assuming a random distribution of conduction mobility edge Ec values in the oxides, stemming from spatial fluctuations induced by disorder in the interface traps distribution. For a Gaussian distribution of Ec, the activation energy Eaeff(T, Nst) varies linearly with 1/T, which accounts satisfactorily for the data obtained on all the studied IXZOs. The model also shows that Eaeff(T, Nst) is a linear function of Nst at a fixed T, which explains the exponential decrease of mu with NST.